Silicon photodiode

- Type: silicon
- Active area: 3.6 x 3.6 mm
- Spectral range: 350 - 1100 nm
- Rise time: 14 ns
- Noise equivalent power (NEP): 1.6 x 10-14 W/vHz
- Bandwidth: 25 MHz
- Dark current: max. 6 nA, typ. 0.35 nA
- Junction capacitance: 40 pF
- Voltage: 10 V
- Connector: BNC output
- Power supply: 1 A23 battery (included)
- Mounting: 2 female threads for M4 - pole mounting possible