Hall Effect in n and p doped germanium (teslameter)
Sku: 280359
Phywee
€4,799.22
€5,759.06
Topics covered:
- Semiconductor
- Band theory / Band gap
- Intrinsic / extrinsic conductivity
- Valence / conduction band
- Lorentz force
- Magnetic induction
- Hall voltage and coefficient
Principles and objectives:
The resistivity and Hall voltage of a rectangular sample of germanium are measured as a function of temperature and magnetic field. The band gap, specific conductivity, charge carrier type, and charge carrier mobility are determined from these measurements.
The proposed experiments are listed below:
- Hall voltage is measured at room temperature and constant magnetic field as a function of control current and plotted on a graph.
- Sample voltage is measured at room temperature and constant control current as a function of magnetic induction B.
- Sample voltage is measured at constant control current as a function of temperature. The band gap of germanium is calculated from these measurements.
- Hall voltage UH is measured as a function of magnetic induction B at room temperature. The charge carrier signs, Hall constant RH, Hall mobility, and charge carrier concentration p are calculated from these measurements.
- Hall voltage UH is measured as a function of temperature at constant magnetic induction B and the values are illustrated on a graph.
Comments:
Possibility of composition without digital teslameter
- Basic module for Hall effect, USB - Hall effect plate, doped Germanium p / Hall effect plate, doped Germanium n - Coil, 600 turns / U-core, laminated magnetic sheet / 2 Pole pieces, flat, 30 x 30 x 48 mm - Tangential Hall probe, protective cap - Digital teslameter - Digital multimeter with thermocouple - Power supply 0...12 V DC, 2 A / 6 V, 12 V AC, 5 A - Tripod / Stainless steel rod, l = 250 mm, d = 10 mm / Double nut - Connection wires: 32 A, 500 mm / 32 A, 750 mm
| Thématique TP | Électromagnétisme |